AM82731-003 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM82731-003  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 4 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 0.9 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3100 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: SO42

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AM82731-003 datasheet

 ..1. Size:61K  st
 am82731-003.pdf pdf_icon

AM82731-003

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .10 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 3.0 W. MIN. WITH 5.7 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731

 5.1. Size:61K  st
 am82731-05.pdf pdf_icon

AM82731-003

AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR 3 1 @ 1 dB OVER- DRIVE .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .400 2LFL (S036) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 50 W MIN. WITH 6 dB GAIN OUT = ORDER CODE BRANDING AM82731-050 82731-50 DESC

 5.2. Size:60K  st
 am82731-025.pdf pdf_icon

AM82731-003

AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .LOW PARASITIC, DOUBLE LEVEL MET- AL DESIGN .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR @ 1 dB OVERDRIVE .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .400 x .400 2LFL (S036) .OVERLAY GEOMETRY hermetically sealed .METAL/CERAMIC HERMETIC PACKAGE ORDER CODE BRANDING .P 25 W MIN. WITH

 7.1. Size:67K  st
 am82731.pdf pdf_icon

AM82731-003

AM82731-006 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 5.5 W. MIN. WITH 5.6 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731-

MOSTRAR MÁS

Otros transistores... AM81214-060, AM81416-020, AM81719-030, AM81719-040, AM81720-012, AM82223-010, AM82325-040, AM82325-050, 13005, AM82731-006, AM82731-012, AM82731-025, AM82731-050, AM83135-001, AM83135-003, AM83135-005, AM83135-010