All Transistors. AM82731-003 Datasheet

 

AM82731-003 Datasheet, Equivalent, Cross Reference Search


   Type Designator: AM82731-003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 0.9 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SO42

 AM82731-003 Transistor Equivalent Substitute - Cross-Reference Search

   

AM82731-003 Datasheet (PDF)

 ..1. Size:61K  st
am82731-003.pdf

AM82731-003 AM82731-003

AM82731-003RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 3.0 W. MIN. WITH 5.7 dB GAIN=hermetically sealed.BANDWIDTH 400 MHz=ORDER CODE BRANDINGAM 82731

 5.1. Size:61K  st
am82731-05.pdf

AM82731-003 AM82731-003

AM82731-050RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR 3:1 @ 1 dB OVER-DRIVE.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2LFL (S036).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 50 W MIN. WITH 6 dB GAINOUT =ORDER CODE BRANDINGAM82731-050 82731-50DESC

 5.2. Size:60K  st
am82731-025.pdf

AM82731-003 AM82731-003

AM82731-025RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.LOW PARASITIC, DOUBLE LEVEL MET-AL DESIGN.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR @ 1 dB OVERDRIVE.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.400 x .400 2LFL (S036).OVERLAY GEOMETRYhermetically sealed.METAL/CERAMIC HERMETIC PACKAGEORDER CODE BRANDING.P 25 W MIN. WITH

 7.1. Size:67K  st
am82731.pdf

AM82731-003 AM82731-003

AM82731-006RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.5 W. MIN. WITH 5.6 dB GAIN=hermetically sealed.BANDWIDTH 400 MHz=ORDER CODE BRANDINGAM 82731-

Datasheet: AM81214-060 , AM81416-020 , AM81719-030 , AM81719-040 , AM81720-012 , AM82223-010 , AM82325-040 , AM82325-050 , 13001-A , AM82731-006 , AM82731-012 , AM82731-025 , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 .

 

 
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