AM82731-025 Todos los transistores

 

AM82731-025 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM82731-025
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3100 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO36

 Búsqueda de reemplazo de transistor bipolar AM82731-025

 

AM82731-025 Datasheet (PDF)

 ..1. Size:60K  st
 am82731-025.pdf pdf_icon

AM82731-025

AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .LOW PARASITIC, DOUBLE LEVEL MET- AL DESIGN .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR @ 1 dB OVERDRIVE .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .400 x .400 2LFL (S036) .OVERLAY GEOMETRY hermetically sealed .METAL/CERAMIC HERMETIC PACKAGE ORDER CODE BRANDING .P 25 W MIN. WITH

 5.1. Size:61K  st
 am82731-05.pdf pdf_icon

AM82731-025

AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR 3 1 @ 1 dB OVER- DRIVE .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .400 2LFL (S036) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 50 W MIN. WITH 6 dB GAIN OUT = ORDER CODE BRANDING AM82731-050 82731-50 DESC

 5.2. Size:61K  st
 am82731-003.pdf pdf_icon

AM82731-025

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .10 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 3.0 W. MIN. WITH 5.7 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731

 7.1. Size:67K  st
 am82731.pdf pdf_icon

AM82731-025

AM82731-006 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 5.5 W. MIN. WITH 5.6 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731-

MOSTRAR MÁS

Otros transistores... AM81719-040 , AM81720-012 , AM82223-010 , AM82325-040 , AM82325-050 , AM82731-003 , AM82731-006 , AM82731-012 , 2222A , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 , AM83135-015 , AM83135-030 , AM83135-040 .

History: NB113FY | DBC846BPDW1T1G | EQF0009 | DDTA114TKA | AC183VII | BC508 | 2SD1015

 

 
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