All Transistors. AM82731-025 Datasheet

 

AM82731-025 Datasheet and Replacement


   Type Designator: AM82731-025
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO36
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AM82731-025 Datasheet (PDF)

 ..1. Size:60K  st
 am82731-025.pdf pdf_icon

AM82731-025

AM82731-025RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.LOW PARASITIC, DOUBLE LEVEL MET-AL DESIGN.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR @ 1 dB OVERDRIVE.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.400 x .400 2LFL (S036).OVERLAY GEOMETRYhermetically sealed.METAL/CERAMIC HERMETIC PACKAGEORDER CODE BRANDING.P 25 W MIN. WITH

 5.1. Size:61K  st
 am82731-05.pdf pdf_icon

AM82731-025

AM82731-050RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR 3:1 @ 1 dB OVER-DRIVE.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2LFL (S036).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 50 W MIN. WITH 6 dB GAINOUT =ORDER CODE BRANDINGAM82731-050 82731-50DESC

 5.2. Size:61K  st
 am82731-003.pdf pdf_icon

AM82731-025

AM82731-003RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 3.0 W. MIN. WITH 5.7 dB GAIN=hermetically sealed.BANDWIDTH 400 MHz=ORDER CODE BRANDINGAM 82731

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 am82731.pdf pdf_icon

AM82731-025

AM82731-006RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.5 W. MIN. WITH 5.6 dB GAIN=hermetically sealed.BANDWIDTH 400 MHz=ORDER CODE BRANDINGAM 82731-

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 2SC803 | DSA2005 | KRA741U

Keywords - AM82731-025 transistor datasheet

 AM82731-025 cross reference
 AM82731-025 equivalent finder
 AM82731-025 lookup
 AM82731-025 substitution
 AM82731-025 replacement

 

 
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