All Transistors. AM82731-025 Datasheet

 

AM82731-025 Datasheet and Replacement


   Type Designator: AM82731-025
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO36

 AM82731-025 Transistor Equivalent Substitute - Cross-Reference Search

   

AM82731-025 Datasheet (PDF)

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AM82731-025

AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .LOW PARASITIC, DOUBLE LEVEL MET- AL DESIGN .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR @ 1 dB OVERDRIVE .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .400 x .400 2LFL (S036) .OVERLAY GEOMETRY hermetically sealed .METAL/CERAMIC HERMETIC PACKAGE ORDER CODE BRANDING .P 25 W MIN. WITH... See More ⇒

 5.1. Size:61K  st
 am82731-05.pdf pdf_icon

AM82731-025

AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR 3 1 @ 1 dB OVER- DRIVE .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .400 2LFL (S036) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 50 W MIN. WITH 6 dB GAIN OUT = ORDER CODE BRANDING AM82731-050 82731-50 DESC... See More ⇒

 5.2. Size:61K  st
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AM82731-025

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .10 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 3.0 W. MIN. WITH 5.7 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731... See More ⇒

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AM82731-025

AM82731-006 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 5.5 W. MIN. WITH 5.6 dB GAIN = hermetically sealed .BANDWIDTH 400 MHz = ORDER CODE BRANDING AM 82731-... See More ⇒

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Datasheet: AM81719-040 , AM81720-012 , AM82223-010 , AM82325-040 , AM82325-050 , AM82731-003 , AM82731-006 , AM82731-012 , 2222A , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 , AM83135-015 , AM83135-030 , AM83135-040 .

History: AC519 | BDX29-6 | 2SC4166 | ZDT45 | DDTA143ZKA | NB112FI | RN2908

Keywords - AM82731-025 transistor datasheet

 AM82731-025 cross reference
 AM82731-025 equivalent finder
 AM82731-025 lookup
 AM82731-025 substitution
 AM82731-025 replacement

 

 
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