BD500B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD500B  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 85 V

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de BD500B

- Selecciónⓘ de transistores por parámetros

 

BD500B datasheet

 ..1. Size:193K  inchange semiconductor
 bd500 bd500b.pdf pdf_icon

BD500B

isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) -80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:105K  inchange semiconductor
 bd500-b bd500 b.pdf pdf_icon

BD500B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -50V(Min) -80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

Otros transistores... BD467, BD477, BD477A, BD477B, BD487, BD488, BD500, BD500A, TIP42C, BD501, BD501A, BD501B, BD505, BD505-1, BD505-5, BD506, BD506-1