BD500B Datasheet. Specs and Replacement

Type Designator: BD500B  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 85 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

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BD500B datasheet

 ..1. Size:193K  inchange semiconductor

 bd500 bd500b.pdf pdf_icon

BD500B

isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) -80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.1. Size:105K  inchange semiconductor

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BD500B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -50V(Min) -80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER ... See More ⇒

Detailed specifications: BD467, BD477, BD477A, BD477B, BD487, BD488, BD500, BD500A, TIP42C, BD501, BD501A, BD501B, BD505, BD505-1, BD505-5, BD506, BD506-1

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