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BD500B Specs and Replacement


   Type Designator: BD500B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 85 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
 

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BD500B detailed specifications

 ..1. Size:193K  inchange semiconductor
 bd500 bd500b.pdf pdf_icon

BD500B

isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) -80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.1. Size:105K  inchange semiconductor
 bd500-b bd500 b.pdf pdf_icon

BD500B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -50V(Min) -80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER ... See More ⇒

Detailed specifications: BD467 , BD477 , BD477A , BD477B , BD487 , BD488 , BD500 , BD500A , TIP42C , BD501 , BD501A , BD501B , BD505 , BD505-1 , BD505-5 , BD506 , BD506-1 .

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