All Transistors. BD500B Datasheet

 

BD500B Datasheet and Replacement


   Type Designator: BD500B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 85 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
 

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BD500B Datasheet (PDF)

 ..1. Size:193K  inchange semiconductor
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BD500B

isc Silicon PNP Power Transistors BD500/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)-80V(Min)High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:105K  inchange semiconductor
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BD500B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) -80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: BD467 , BD477 , BD477A , BD477B , BD487 , BD488 , BD500 , BD500A , TIP42C , BD501 , BD501A , BD501B , BD505 , BD505-1 , BD505-5 , BD506 , BD506-1 .

History: 2N5812 | BD148-16 | S8550W | C5T5550 | 2SB56 | FJN3308R | C5T6539

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