BD643 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD643 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO220
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BD643 datasheet
bd643.pdf
isc Silicon NPN Darlington Power Transistor BD643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD644 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output st
bd643-bd645-bd647-bd649-bd651.pdf
SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings
bd643f.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD643F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD644F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
Otros transistores... BD619, BD620, BD633, BD634, BD635, BD636, BD637, BD638, BD333, BD643F, BD644, BD644F, BD645, BD645F, BD646, BD646F, BD647
Parámetros del transistor bipolar y su interrelación.
History: BD645F
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