BD643 Specs and Replacement
Type Designator: BD643
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BD643 Transistor Equivalent Substitute - Cross-Reference Search
BD643 detailed specifications
bd643.pdf
isc Silicon NPN Darlington Power Transistor BD643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD644 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output st... See More ⇒
bd643-bd645-bd647-bd649-bd651.pdf
SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒
bd643f.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD643F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD644F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: BD619 , BD620 , BD633 , BD634 , BD635 , BD636 , BD637 , BD638 , BD333 , BD643F , BD644 , BD644F , BD645 , BD645F , BD646 , BD646F , BD647 .
Keywords - BD643 transistor specs
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