BDX53B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

isc Silicon NPN Darlington Power Transistor BDX53B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.0 V(Max) @ I = 3.0 A CE(sat) C Complement to Type BDX54B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 DESCRIPTION 2 1 The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington T0-220FP configuration mounted in T0-220FP fully molded isolated pa

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1