Справочник транзисторов. BDX53B

 

Биполярный транзистор BDX53B Даташит. Аналоги


   Наименование производителя: BDX53B
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 750
   Корпус транзистора: TO220
 

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BDX53B Datasheet (PDF)

 ..1. Size:169K  motorola
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BDX53B

Order this documentMOTOROLAby BDX53B/DSEMICONDUCTOR TECHNICAL DATANPNPlastic Medium-PowerBDX53BComplementary SiliconTransistorsBDX53CPNP. . . designed for generalpurpose amplifier and lowspeed switching applications.BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdcBDX54CVCEO(sus) = 80

 ..2. Size:73K  st
bdx53b bdx53c bdx54b bdx54c.pdfpdf_icon

BDX53B

BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t

 ..3. Size:355K  onsemi
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BDX53B

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

 ..4. Size:215K  inchange semiconductor
bdx53b.pdfpdf_icon

BDX53B

isc Silicon NPN Darlington Power Transistor BDX53BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V(Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe

Другие транзисторы... BDX50-4 , BDX50-5 , BDX50-6 , BDX50-7 , BDX51 , BDX53 , BDX53A , BDX53AFI , 2SC2482 , BDX53BFI , BDX53C , BDX53CFI , BDX53D , BDX53E , BDX53F , BDX53H , BDX53S .

History: PUMH19 | TI2150 | 2N1900 | 2SC963

 

 
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