BDX53B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX53B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDX53B Transistor Equivalent Substitute - Cross-Reference Search
BDX53B Datasheet (PDF)
bdx53b bdx54.pdf
Order this documentMOTOROLAby BDX53B/DSEMICONDUCTOR TECHNICAL DATANPNPlastic Medium-PowerBDX53BComplementary SiliconTransistorsBDX53CPNP. . . designed for generalpurpose amplifier and lowspeed switching applications.BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdcBDX54CVCEO(sus) = 80
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
bdx53b.pdf
isc Silicon NPN Darlington Power Transistor BDX53BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V(Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe
bdx53bfp.pdf
BDX53BFPSILICON POWER DARLINGTON TRANSISTORAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENT FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3DESCRIPTION 21The BDX53BFP is a silicon Epitaxial-Base NPNpower transistor in monolithic DarlingtonT0-220FPconfiguration mounted in T0-220FP fully moldedisolated pa
bdx53bg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC2382 | AD702U | AD150-4
