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BU508DFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU508DFI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 125 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: ISOWATT218
 

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BU508DFI Datasheet (PDF)

 ..1. Size:80K  st
bu208d bu508d bu508dfi.pdf pdf_icon

BU508DFI

BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS BU208D AND BU508DFI ARE STMPREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGETO-3(U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE1 NPN TRANSISTOR WITH INTEGRATED2FREEWHEELING DIODEAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV33DESCRIPTION221 1T

 ..2. Size:414K  st
bu508dfi.pdf pdf_icon

BU508DFI

BU508DFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR2TV UP TO 25"1DESCRIPTION ISOWATT218The BU508DFI is manufactured using

 ..3. Size:216K  inchange semiconductor
bu508dfi.pdf pdf_icon

BU508DFI

isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

 7.1. Size:45K  philips
bu508df.pdf pdf_icon

BU508DFI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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