BU508DFI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU508DFI  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 125 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: ISOWATT218

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BU508DFI datasheet

 ..1. Size:80K  st
 bu208d bu508d bu508dfi.pdf pdf_icon

BU508DFI

BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE TO-3 (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE 1 NPN TRANSISTOR WITH INTEGRATED 2 FREEWHEELING DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV 3 3 DESCRIPTION 2 2 1 1 T

 ..2. Size:414K  st
 bu508dfi.pdf pdf_icon

BU508DFI

BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV UP TO 25" 1 DESCRIPTION ISOWATT218 The BU508DFI is manufactured using

 ..3. Size:216K  inchange semiconductor
 bu508dfi.pdf pdf_icon

BU508DFI

isc Silicon NPN Power Transistor BU508DFI DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

 7.1. Size:45K  philips
 bu508df.pdf pdf_icon

BU508DFI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec

MOSTRAR MÁS

Otros transistores... BU508, BU508A, BU508AF, BU508AFI, BU508AT, BU508AXI, BU508D, BU508DF, 2SC1815, BU508DR, BU508DRF, BU508DXI, BU508FI, BU508L, BU522, BU522A, BU522B