BU508DFI
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU508DFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 700
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 125
pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar BU508DFI
BU508DFI
Datasheet (PDF)
..1. Size:80K st
bu208d bu508d bu508dfi.pdf
BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS BU208D AND BU508DFI ARE STMPREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGETO-3(U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE1 NPN TRANSISTOR WITH INTEGRATED2FREEWHEELING DIODEAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV33DESCRIPTION221 1T
..2. Size:414K st
bu508dfi.pdf
BU508DFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR2TV UP TO 25"1DESCRIPTION ISOWATT218The BU508DFI is manufactured using
..3. Size:216K inchange semiconductor
bu508dfi.pdf
isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
7.1. Size:45K philips
bu508df.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec
7.2. Size:228K comset
bu508df.pdf
NPN BU508DFSILICON DIFFUSED POWER TRANSISTORSSILICON DIFFUSED POWER TRANSISTORSThe BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode forthe BU508DF).They are a high voltage, high speed switching and they are intended for use in horizontal deflexioncircuits of colour television receivers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value U
7.3. Size:42K inchange semiconductor
bu508df.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDIT
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