BU508DFI Datasheet, Equivalent, Cross Reference Search
Type Designator: BU508DFI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: ISOWATT218
BU508DFI Transistor Equivalent Substitute - Cross-Reference Search
BU508DFI Datasheet (PDF)
bu208d bu508d bu508dfi.pdf
BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS BU208D AND BU508DFI ARE STMPREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGETO-3(U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE1 NPN TRANSISTOR WITH INTEGRATED2FREEWHEELING DIODEAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV33DESCRIPTION221 1T
bu508dfi.pdf
BU508DFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR2TV UP TO 25"1DESCRIPTION ISOWATT218The BU508DFI is manufactured using
bu508dfi.pdf
isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
bu508df.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec
bu508df.pdf
NPN BU508DFSILICON DIFFUSED POWER TRANSISTORSSILICON DIFFUSED POWER TRANSISTORSThe BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode forthe BU508DF).They are a high voltage, high speed switching and they are intended for use in horizontal deflexioncircuits of colour television receivers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value U
bu508df.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDIT
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
