BU508DFI Datasheet. Specs and Replacement

Type Designator: BU508DFI  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: ISOWATT218

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BU508DFI datasheet

 ..1. Size:80K  st

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BU508DFI

BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE TO-3 (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE 1 NPN TRANSISTOR WITH INTEGRATED 2 FREEWHEELING DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV 3 3 DESCRIPTION 2 2 1 1 T... See More ⇒

 ..2. Size:414K  st

bu508dfi.pdf pdf_icon

BU508DFI

BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV UP TO 25" 1 DESCRIPTION ISOWATT218 The BU508DFI is manufactured using ... See More ⇒

 ..3. Size:216K  inchange semiconductor

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BU508DFI

isc Silicon NPN Power Transistor BU508DFI DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒

 7.1. Size:45K  philips

bu508df.pdf pdf_icon

BU508DFI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec... See More ⇒

Detailed specifications: BU508, BU508A, BU508AF, BU508AFI, BU508AT, BU508AXI, BU508D, BU508DF, 2SC1815, BU508DR, BU508DRF, BU508DXI, BU508FI, BU508L, BU522, BU522A, BU522B

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