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BUT211 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUT211
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

BUT211 Datasheet (PDF)

 ..1. Size:54K  philips
 but211 1.pdf pdf_icon

BUT211

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suitedfor high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE

 ..2. Size:241K  inchange semiconductor
 but211.pdf pdf_icon

BUT211

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V V

 0.1. Size:57K  philips
 but211x 1.pdf pdf_icon

BUT211

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelopespecially suited for high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage

 0.2. Size:232K  inchange semiconductor
 but211x.pdf pdf_icon

BUT211

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TN3467 | BFS91A | FBP5096G3

 

 
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