BUT211 - параметры, поиск аналогов, даташиты транзистора

BUT211 Datasheet (PDF)

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suitedfor high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V V

0.1. Size:57K philips
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelopespecially suited for high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .