All Transistors. BUT211 Datasheet

 

BUT211 Datasheet and Replacement


   Type Designator: BUT211
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: TO220

 BUT211 Transistor Equivalent Substitute - Cross-Reference Search

   

BUT211 Datasheet (PDF)

 ..1. Size:54K  philips
 but211 1.pdf pdf_icon

BUT211

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE... See More ⇒

 ..2. Size:241K  inchange semiconductor
 but211.pdf pdf_icon

BUT211

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V V... See More ⇒

 0.1. Size:57K  philips
 but211x 1.pdf pdf_icon

BUT211

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage ... See More ⇒

 0.2. Size:232K  inchange semiconductor
 but211x.pdf pdf_icon

BUT211

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V ... See More ⇒

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Datasheet: BUT14 , BUT15 , BUT16 , BUT18 , BUT18A , BUT18AF , BUT18F , BUT21 , TIP120 , BUT21A , BUT21AF , BUT21B , BUT21BF , BUT21C , BUT21CF , BUT22A , BUT22B .

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