2N3740 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3740  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

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2N3740 datasheet

 ..1. Size:62K  microsemi
 2n3740.pdf pdf_icon

2N3740

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3740 APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NP

 ..2. Size:196K  inchange semiconductor
 2n3740 2n3741.pdf pdf_icon

2N3740

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL

 0.1. Size:10K  semelab
 2n3740r.pdf pdf_icon

2N3740

2N3740R Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.2. Size:62K  microsemi
 2n3740a.pdf pdf_icon

2N3740

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3740A APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cuto

MOSTRAR MÁS

Otros transistores... 2N3735S, 2N3736, 2N3736A, 2N3737, 2N3737A, 2N3738, 2N3739, 2N374, S9014, 2N3740A, 2N3740AR, 2N3741, 2N3741A, 2N3741R, 2N3742, 2N3742S, 2N3743