2N3740
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3740
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 100
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2N3740
2N3740
Datasheet (PDF)
..1. Size:62K microsemi
2n3740.pdf 
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP
..2. Size:196K inchange semiconductor
2n3740 2n3741.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL
0.1. Size:10K semelab
2n3740r.pdf
2N3740RDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.2. Size:62K microsemi
2n3740a.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto
0.3. Size:221K inchange semiconductor
2n3740a.pdf
isc Silicon PNP Power Transistor 2N3740ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -
Otros transistores... 2N3735S
, 2N3736
, 2N3736A
, 2N3737
, 2N3737A
, 2N3738
, 2N3739
, 2N374
, 2SA1837
, 2N3740A
, 2N3740AR
, 2N3741
, 2N3741A
, 2N3741R
, 2N3742
, 2N3742S
, 2N3743
.
