2N3740 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3740
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
2N3740 Transistor Equivalent Substitute - Cross-Reference Search
2N3740 Datasheet (PDF)
2n3740.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP
2n3740 2n3741.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL
2n3740r.pdf
2N3740RDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n3740a.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto
2n3740a.pdf
isc Silicon PNP Power Transistor 2N3740ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
