HF100 Todos los transistores

 

HF100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HF100
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.03 W
   Tensión colector-base (Vcb): 15 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 7.5

 Búsqueda de reemplazo de transistor bipolar HF100

 

HF100 Datasheet (PDF)

 0.1. Size:1507K  cn wxdh
 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

HF100

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur

 0.2. Size:281K  dacosemi
 dahf100g120sa.pdf pdf_icon

HF100

DAHF100G120SA DACO SEMICONDUCTOR CO., LTD. IGBT Power Module 1200V / 100A HD-9434 Preliminary Features 34mm Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit Capability Applications Welder / Power Supply Circuit Diagram Headline UPS / Inverter 6 Industrial Motor Drive 7 1 2 3 Maximum Ratings

Otros transistores... HEPS9147 , HEPS9148 , HEPS9149 , HEPS9150 , HEPS9151 , HEPS9152 , HEPS9153 , HF0100 , 2N2222 , HF200 , HF8004 , HK100 , HL100 , HNT1T018 , HNT1T05 , HPA100R , HPA100R-2 .

 

 
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