HF100 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HF100  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.03 W

Tensión colector-base (Vcb): 15 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 7.5

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HF100 datasheet

 0.1. Size:1507K  cn wxdh
 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

HF100

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur

 0.2. Size:281K  dacosemi
 dahf100g120sa.pdf pdf_icon

HF100

DAHF100G120SA DACO SEMICONDUCTOR CO., LTD. IGBT Power Module 1200V / 100A HD-9434 Preliminary Features 34mm Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit Capability Applications Welder / Power Supply Circuit Diagram Headline UPS / Inverter 6 Industrial Motor Drive 7 1 2 3 Maximum Ratings

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