HF100 Specs and Replacement
Type Designator: HF100
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
HF100 Transistor Equivalent Substitute - Cross-Reference Search
HF100 detailed specifications
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DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒
dahf100g120sa.pdf
DAHF100G120SA DACO SEMICONDUCTOR CO., LTD. IGBT Power Module 1200V / 100A HD-9434 Preliminary Features 34mm Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit Capability Applications Welder / Power Supply Circuit Diagram Headline UPS / Inverter 6 Industrial Motor Drive 7 1 2 3 Maximum Ratings... See More ⇒
Detailed specifications: HEPS9147 , HEPS9148 , HEPS9149 , HEPS9150 , HEPS9151 , HEPS9152 , HEPS9153 , HF0100 , 2N2222 , HF200 , HF8004 , HK100 , HL100 , HNT1T018 , HNT1T05 , HPA100R , HPA100R-2 .
History: BUY60 | HF200 | FHT9014Y
Keywords - HF100 transistor specs
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History: BUY60 | HF200 | FHT9014Y
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