HF100 Datasheet and Replacement
Type Designator: HF100
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
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HF100 Datasheet (PDF)
dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur
dahf100g120sa.pdf

DAHF100G120SADACO SEMICONDUCTOR CO., LTD.IGBT Power Module1200V / 100AHD-9434PreliminaryFeatures 34mm Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit CapabilityApplications Welder / Power SupplyCircuit Diagram Headline UPS / Inverter6 Industrial Motor Drive71 2 3Maximum Ratings
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: CH867UPNGP | NJD2873T4G | AFY29 | ET5065 | FZT560 | ED1401A | GSDU7535
Keywords - HF100 transistor datasheet
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History: CH867UPNGP | NJD2873T4G | AFY29 | ET5065 | FZT560 | ED1401A | GSDU7535



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