HF100 Datasheet. Specs and Replacement

Type Designator: HF100  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 7.5

Noise Figure, dB: -

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HF100 datasheet

 0.1. Size:1507K  cn wxdh

 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

HF100

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

 0.2. Size:281K  dacosemi

 dahf100g120sa.pdf pdf_icon

HF100

DAHF100G120SA DACO SEMICONDUCTOR CO., LTD. IGBT Power Module 1200V / 100A HD-9434 Preliminary Features 34mm Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit Capability Applications Welder / Power Supply Circuit Diagram Headline UPS / Inverter 6 Industrial Motor Drive 7 1 2 3 Maximum Ratings... See More ⇒

Detailed specifications: HEPS9147, HEPS9148, HEPS9149, HEPS9150, HEPS9151, HEPS9152, HEPS9153, HF0100, 2N2222, HF200, HF8004, HK100, HL100, HNT1T018, HNT1T05, HPA100R, HPA100R-2

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