KSB596 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSB596
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de KSB596
Principales características: KSB596
ksb596.pdf
KSB596 Power Amplifier Applications Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current(DC) - 4 A IB Base Current - 0.4 A
ksb596.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... KSB546R , KSB546Y , KSB564 , KSB564A , KSB564AG , KSB564AO , KSB564AY , KSB595 , 2222A , KSB601 , KSB601O , KSB601R , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 .
History: KSB707Y | 2SA1564
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