KSB596 Specs and Replacement
Type Designator: KSB596
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
KSB596 Transistor Equivalent Substitute - Cross-Reference Search
KSB596 detailed specifications
ksb596.pdf
KSB596 Power Amplifier Applications Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current(DC) - 4 A IB Base Current - 0.4 A ... See More ⇒
ksb596.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: KSB546R , KSB546Y , KSB564 , KSB564A , KSB564AG , KSB564AO , KSB564AY , KSB595 , 2222A , KSB601 , KSB601O , KSB601R , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 .
Keywords - KSB596 transistor specs
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