KSB596 Datasheet. Specs and Replacement

Type Designator: KSB596  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

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KSB596 datasheet

 ..1. Size:46K  fairchild semi

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KSB596

KSB596 Power Amplifier Applications Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current(DC) - 4 A IB Base Current - 0.4 A ... See More ⇒

 ..2. Size:228K  onsemi

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KSB596

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: KSB546R, KSB546Y, KSB564, KSB564A, KSB564AG, KSB564AO, KSB564AY, KSB595, 2222A, KSB601, KSB601O, KSB601R, KSB707, KSB707O, KSB707R, KSB707Y, KSB708

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