KSC5022R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5022R  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 18 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3P

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KSC5022R datasheet

 8.1. Size:58K  fairchild semi
 ksc5024.pdf pdf_icon

KSC5022R

KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (

 8.2. Size:302K  fairchild semi
 ksc5021.pdf pdf_icon

KSC5022R

October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC C

 8.3. Size:120K  fairchild semi
 ksc5026m.pdf pdf_icon

KSC5022R

January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (D

 8.4. Size:53K  fairchild semi
 ksc5027.pdf pdf_icon

KSC5022R

KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

MOSTRAR MÁS

Otros transistores... KSC5020Y, KSC5021, KSC5021F, KSC5021O, KSC5021R, KSC5021Y, KSC5022, KSC5022O, BD678, KSC5022Y, KSC5023, KSC5023O, KSC5023R, KSC5023Y, KSC5024, KSC5024O, KSC5024R