All Transistors. KSC5022R Datasheet

 

KSC5022R Datasheet and Replacement


   Type Designator: KSC5022R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 18 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3P
 

 KSC5022R Substitution

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KSC5022R Datasheet (PDF)

 8.1. Size:58K  fairchild semi
ksc5024.pdf pdf_icon

KSC5022R

KSC5024High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 VVEBO Emitter- Base Voltage 7 VIC Collector Current (DC) 10 AICP Collector Current (

 8.2. Size:302K  fairchild semi
ksc5021.pdf pdf_icon

KSC5022R

October 2008KSC5021NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOATO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value Units 800 VVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 7 VVEBO Emitter-Base Voltage 5 AIC C

 8.3. Size:120K  fairchild semi
ksc5026m.pdf pdf_icon

KSC5022R

January 2011KSC5026MNPN Silicon TransistorFeatures High Voltage and High Reliability High Speed Switching Wide SOATO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (D

 8.4. Size:53K  fairchild semi
ksc5027.pdf pdf_icon

KSC5022R

KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

Datasheet: KSC5020Y , KSC5021 , KSC5021F , KSC5021O , KSC5021R , KSC5021Y , KSC5022 , KSC5022O , 2SC5200 , KSC5022Y , KSC5023 , KSC5023O , KSC5023R , KSC5023Y , KSC5024 , KSC5024O , KSC5024R .

History: TN5142 | 2SA638S | BUT22A | 3DD4222T | A1024 | CHDTC124EEGP

Keywords - KSC5022R transistor datasheet

 KSC5022R cross reference
 KSC5022R equivalent finder
 KSC5022R lookup
 KSC5022R substitution
 KSC5022R replacement

 

 
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