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KSD526O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSD526O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 90 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar KSD526O

 

KSD526O Datasheet (PDF)

 8.1. Size:177K  fairchild semi
 ksd526.pdf pdf_icon

KSD526O

April 2006 KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC

 8.2. Size:260K  onsemi
 ksd526.pdf pdf_icon

KSD526O

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... KSD5074 , KSD5075 , KSD5075T , KSD5076 , KSD5078 , KSD5080 , KSD5090 , KSD526 , 2SC4793 , KSD526R , KSD526Y , KSD560 , KSD560O , KSD560R , KSD560Y , KSD568 , KSD568O .

 

 
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