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KSD526O Specs and Replacement


   Type Designator: KSD526O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 KSD526O Transistor Equivalent Substitute - Cross-Reference Search

   

KSD526O detailed specifications

 8.1. Size:177K  fairchild semi
 ksd526.pdf pdf_icon

KSD526O

April 2006 KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC ... See More ⇒

 8.2. Size:260K  onsemi
 ksd526.pdf pdf_icon

KSD526O

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: KSD5074 , KSD5075 , KSD5075T , KSD5076 , KSD5078 , KSD5080 , KSD5090 , KSD526 , 2SC4793 , KSD526R , KSD526Y , KSD560 , KSD560O , KSD560R , KSD560Y , KSD568 , KSD568O .

History: 2SB1612

Keywords - KSD526O transistor specs

 KSD526O cross reference
 KSD526O equivalent finder
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