MDS1678 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDS1678 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 65 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO126
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MDS1678 datasheet
mds1654urh.pdf
MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)
mds1655urh.pdf
MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC
mds1651urh.pdf
MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)
mds1652eruh.pdf
Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle
Otros transistores... MD982F, MD984, MD984F, MD985, MD985F, MD986, MD986F, MD990, BC549, MDS20, MDS21, MDS26, MDS27, MDS60, MDS76, MDS77, ME0401
Parámetros del transistor bipolar y su interrelación.
History: 2SC4200 | AFZ10
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