MDS1678 Datasheet. Specs and Replacement
Type Designator: MDS1678 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126
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MDS1678 Substitution
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MDS1678 datasheet
MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON) ... See More ⇒
MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC ... See More ⇒
MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON) ... See More ⇒
Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle... See More ⇒
Detailed specifications: MD982F, MD984, MD984F, MD985, MD985F, MD986, MD986F, MD990, BC549, MDS20, MDS21, MDS26, MDS27, MDS60, MDS76, MDS77, ME0401
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