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UMB9N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UMB9N
   Código: B9
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC-88

 Búsqueda de reemplazo de transistor bipolar UMB9N

 

UMB9N Datasheet (PDF)

 ..1. Size:45K  rohm
emb9 umb9n imb9a.pdf pdf_icon

UMB9N

EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features External dimensions (Unit mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB9 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3) (5) (2) 3) Transistor elements are independent, eliminating (6) (1) 1.2 interference. 1.6 4)

 ..2. Size:61K  rohm
umb9n.pdf pdf_icon

UMB9N

Transistors General purpose (dual digital transistors) UMB9N / IMB9A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Ys in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon

 ..3. Size:62K  rohm
umb9n imb9a b9 sot23-6 sot363.pdf pdf_icon

UMB9N

Transistors General purpose (dual digital transistors) UMB9N / IMB9A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Ys in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon

Otros transistores... UMB1N , UMB2N , UMB3N , UMB4N , UMB5N , UMB6N , MMUN2235LT1G , UMB8N , BC546 , UMC1N , UMC2N , UMC3N , UMC4N , UMC5N , PDTA115EEF , PDTA115EK , UMD10N .

History: KRX101E | KRC821U

 

 
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