UMB9N Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

UMB9N Datasheet. Specs and Replacement

Type Designator: UMB9N 📄📄

SMD Transistor Code: B9

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC-88

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UMB9N Substitution

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UMB9N datasheet

..1. Size:45K rohm

emb9 umb9n imb9a.pdf pdf_icon

EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features External dimensions (Unit mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB9 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3) (5) (2) 3) Transistor elements are independent, eliminating (6) (1) 1.2 interference. 1.6 4)... See More ⇒

..2. Size:61K rohm

umb9n.pdf pdf_icon

Transistors General purpose (dual digital transistors) UMB9N / IMB9A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Ys in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon... See More ⇒

..3. Size:62K rohm

umb9n imb9a b9 sot23-6 sot363.pdf pdf_icon