PBSS302PZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS302PZ  📄📄 

Código: S302PZ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 130 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT223

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PBSS302PZ datasheet

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PBSS302PZ

PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 ..2. Size:280K  nxp
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PBSS302PZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:188K  philips
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PBSS302PZ

PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

 6.2. Size:142K  philips
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PBSS302PZ

PBSS302PD 40 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302ND. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous

Otros transistores... PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, 2222A, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX