All Transistors. PBSS302PZ Datasheet

 

PBSS302PZ Datasheet and Replacement


   Type Designator: PBSS302PZ
   SMD Transistor Code: S302PZ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT223
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PBSS302PZ Datasheet (PDF)

 ..1. Size:163K  philips
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PBSS302PZ

PBSS302PZ20 V, 5.5 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 ..2. Size:280K  nxp
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PBSS302PZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:188K  philips
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PBSS302PZ

PBSS302PX20 V, 5.1 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302NX.1.2 Features Low collector-emitter saturation voltage VCEsa

 6.2. Size:142K  philips
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PBSS302PZ

PBSS302PD40 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 6 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302ND.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | FX3724 | SGSF321

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