PBSS302PZ Datasheet. Specs and Replacement

Type Designator: PBSS302PZ  📄📄 

SMD Transistor Code: S302PZ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT223

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PBSS302PZ datasheet

 ..1. Size:163K  philips

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PBSS302PZ

PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒

 ..2. Size:280K  nxp

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PBSS302PZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:188K  philips

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PBSS302PZ

PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsa... See More ⇒

 6.2. Size:142K  philips

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PBSS302PZ

PBSS302PD 40 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302ND. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous... See More ⇒

Detailed specifications: PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, 2222A, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX

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