PBSS304PD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS304PD  📄📄 

Código: AJ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 155

Encapsulados: SOT457 SC74

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PBSS304PD datasheet

 ..1. Size:129K  philips
 pbss304pd.pdf pdf_icon

PBSS304PD

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 ..2. Size:122K  nxp
 pbss304pd.pdf pdf_icon

PBSS304PD

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 6.1. Size:173K  nxp
 pbss304pz.pdf pdf_icon

PBSS304PD

PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 6.2. Size:198K  nxp
 pbss304px.pdf pdf_icon

PBSS304PD

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NX. 1.2 Features Low collector-emitter saturation voltage VCEsat

MOSTRAR MÁS

Otros transistores... PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, BC639, PBSS304PX, PBSS304PZ, PBSS305ND, PBSS305NX, PBSS305NZ, PBSS305PD, PBSS305PX, PBSS305PZ