PBSS304PD Datasheet. Specs and Replacement

Type Designator: PBSS304PD  📄📄 

SMD Transistor Code: AJ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 155

Noise Figure, dB: -

Package: SOT457 SC74

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PBSS304PD datasheet

 ..1. Size:129K  philips

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PBSS304PD

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current... See More ⇒

 ..2. Size:122K  nxp

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PBSS304PD

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current... See More ⇒

 6.1. Size:173K  nxp

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PBSS304PD

PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu... See More ⇒

 6.2. Size:198K  nxp

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PBSS304PD

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NX. 1.2 Features Low collector-emitter saturation voltage VCEsat... See More ⇒

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Detailed specifications: PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, BC639, PBSS304PX, PBSS304PZ, PBSS305ND, PBSS305NX, PBSS305NZ, PBSS305PD, PBSS305PX, PBSS305PZ

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