PBSS3515VS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS3515VS 📄📄
Código: 35
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT666
📄📄 Copiar
Búsqueda de reemplazo de PBSS3515VS
- Selecciónⓘ de transistores por parámetros
PBSS3515VS datasheet
pbss3515vs.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product specification 2001 Nov 07 Supersedes data of 2001 Sep 27 Philips Semiconductors Product specification 15 V low VCEsat PNP double transistor PBSS3515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p
pbss3515f 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (Automotive, Telecom and Audio Video) such as
pbss3515m.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili
pbss3515e.pdf
PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 02 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto
Otros transistores... PBSS305PX, PBSS305PZ, PBSS306NX, PBSS306NZ, PBSS306PX, PBSS306PZ, PBSS3515E, PBSS3515M, B647, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT
Parámetros del transistor bipolar y su interrelación.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1222 | 2sc2581 | c1061 transistor | 2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525 | tip73






