PBSS3515VS Todos los transistores

 

PBSS3515VS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS3515VS
   Código: 35
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT666
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PBSS3515VS Datasheet (PDF)

 ..1. Size:74K  nxp
pbss3515vs.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS3515VS15 V low VCEsat PNP doubletransistorProduct specification 2001 Nov 07Supersedes data of 2001 Sep 27Philips Semiconductors Product specification15 V low VCEsat PNP double transistorPBSS3515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p

 6.1. Size:64K  philips
pbss3515f 1.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS3515FPNP transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationPNP transistor PBSS3515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (Automotive,Telecom and Audio Video) such as

 6.2. Size:142K  philips
pbss3515m.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3515M15 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet15 V, 0.5 A PBSS3515MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 6.3. Size:113K  nxp
pbss3515e.pdf pdf_icon

PBSS3515VS

PBSS3515E15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 02 27 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMA56108 | FT1724 | 2SA1796 | KT739A | BFX92 | 2SC2480 | 2SA1208R

 

 
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