PBSS3515VS Datasheet. Specs and Replacement

Type Designator: PBSS3515VS  📄📄 

SMD Transistor Code: 35

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT666

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PBSS3515VS datasheet

 ..1. Size:74K  nxp

pbss3515vs.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product specification 2001 Nov 07 Supersedes data of 2001 Sep 27 Philips Semiconductors Product specification 15 V low VCEsat PNP double transistor PBSS3515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p... See More ⇒

 6.1. Size:64K  philips

pbss3515f 1.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (Automotive, Telecom and Audio Video) such as ... See More ⇒

 6.2. Size:142K  philips

pbss3515m.pdf pdf_icon

PBSS3515VS

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili... See More ⇒

 6.3. Size:113K  nxp

pbss3515e.pdf pdf_icon

PBSS3515VS

PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 02 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto... See More ⇒

Detailed specifications: PBSS305PX, PBSS305PZ, PBSS306NX, PBSS306NZ, PBSS306PX, PBSS306PZ, PBSS3515E, PBSS3515M, B647, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT

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