PBSS4041NT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PBSS4041NT60 V, 3.8 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturati

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 2 8 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation High

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistor10 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturation volt