PBSS4041NT Datasheet. Specs and Replacement
Type Designator: PBSS4041NT 📄📄
SMD Transistor Code: *BK
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT23
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PBSS4041NT datasheet
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PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE... See More ⇒
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PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation High... See More ⇒
Detailed specifications: PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, BD139, PBSS4041PT, PBSS4120T, PBSS4130T, PBSS4140DPN, PBSS4140T, PBSS4140U, PBSS4140V, PBSS4160DPN
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