PBSS9410PA Todos los transistores

 

PBSS9410PA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS9410PA
   Código: AG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT1061

 Búsqueda de reemplazo de transistor bipolar PBSS9410PA

 

PBSS9410PA Datasheet (PDF)

 ..1. Size:167K  philips
pbss9410pa.pdf

PBSS9410PA
PBSS9410PA

PBSS9410PA100 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 11 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS8510PA.1.2 Features and benefit

 ..2. Size:284K  nxp
pbss9410pa.pdf

PBSS9410PA
PBSS9410PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:180K  philips
pbss9110t.pdf

PBSS9410PA
PBSS9410PA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS9110T100 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 May 13Supersedes data of 2004 May 06NXP Semiconductors Product data sheet100 V, 1 A PBSS9110TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT23 packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio

 9.2. Size:184K  nxp
pbss9110x.pdf

PBSS9410PA
PBSS9410PA

PBSS9110X100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.NPN complement: PBSS8110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca

 9.3. Size:188K  nxp
pbss9110z.pdf

PBSS9410PA
PBSS9410PA

PBSS9110Z100 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 9.4. Size:166K  nxp
pbss9110d.pdf

PBSS9410PA
PBSS9410PA

PBSS9110D100 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110D.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 9.5. Size:153K  nxp
pbss9110y.pdf

PBSS9410PA
PBSS9410PA

PBSS9110Y100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation1.3 A

 9.6. Size:395K  nxp
pbss9110t.pdf

PBSS9410PA
PBSS9410PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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