PBSS9410PA Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS9410PA
Código: AG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SOT1061
Búsqueda de reemplazo de PBSS9410PA
PBSS9410PA PDF detailed specifications
pbss9410pa.pdf
PBSS9410PA 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS8510PA. 1.2 Features and benefit... See More ⇒
pbss9410pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
pbss9110t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2004 May 13 Supersedes data of 2004 May 06 NXP Semiconductors Product data sheet 100 V, 1 A PBSS9110T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT23 package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio... See More ⇒
pbss9110x.pdf
PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca... See More ⇒
Otros transistores... PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T , PBSS9110X , PBSS9110Y , PBSS9110Z , TIP120 , PDTA113EE , PDTA113EM , PDTA113ET , PDTA113EU , PDTA113ZE , PDTA113ZM , PDTA113ZT , PDTA113ZU .
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