PBSS9410PA Datasheet. Specs and Replacement

Type Designator: PBSS9410PA  📄📄 

SMD Transistor Code: AG

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT1061

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PBSS9410PA datasheet

 ..1. Size:167K  philips

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PBSS9410PA

PBSS9410PA 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS8510PA. 1.2 Features and benefit... See More ⇒

 ..2. Size:284K  nxp

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PBSS9410PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:180K  philips

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PBSS9410PA

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2004 May 13 Supersedes data of 2004 May 06 NXP Semiconductors Product data sheet 100 V, 1 A PBSS9110T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT23 package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio... See More ⇒

 9.2. Size:184K  nxp

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PBSS9410PA

PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca... See More ⇒

Detailed specifications: PBSS8110Y, PBSS8110Z, PBSS8510PA, PBSS9110D, PBSS9110T, PBSS9110X, PBSS9110Y, PBSS9110Z, TIP120, PDTA113EE, PDTA113EM, PDTA113ET, PDTA113EU, PDTA113ZE, PDTA113ZM, PDTA113ZT, PDTA113ZU

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