All Transistors. PBSS9410PA Datasheet

 

PBSS9410PA Datasheet and Replacement


   Type Designator: PBSS9410PA
   SMD Transistor Code: AG
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT1061
 

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PBSS9410PA Datasheet (PDF)

 ..1. Size:167K  philips
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PBSS9410PA

PBSS9410PA100 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 11 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS8510PA.1.2 Features and benefit

 ..2. Size:284K  nxp
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PBSS9410PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:180K  philips
pbss9110t.pdf pdf_icon

PBSS9410PA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS9110T100 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 May 13Supersedes data of 2004 May 06NXP Semiconductors Product data sheet100 V, 1 A PBSS9110TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT23 packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio

 9.2. Size:184K  nxp
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PBSS9410PA

PBSS9110X100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.NPN complement: PBSS8110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NA21HH | PH1214-300M | RN2108CT | ASY29 | BC373 | BA15N26A | PMBT3905

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