PMBT5551 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMBT5551  📄📄 

Código: G1_pG1_tG1_WG1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT23

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PMBT5551 datasheet

 ..1. Size:111K  philips
pmbt5551.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector Gene

 ..2. Size:49K  philips
pmbt5551 3.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector

 ..3. Size:111K  nxp
pmbt5551.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector Gene

 7.1. Size:49K  philips
pmbt5550 3.pdf pdf_icon

PMBT5551

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