All Transistors. PMBT5551 Datasheet

 

PMBT5551 Datasheet and Replacement


   Type Designator: PMBT5551
   SMD Transistor Code: G1_pG1_tG1_WG1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT23
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PMBT5551 Datasheet (PDF)

 ..1. Size:111K  philips
pmbt5551.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene

 ..2. Size:49K  philips
pmbt5551 3.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5551NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector

 ..3. Size:111K  nxp
pmbt5551.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene

 7.1. Size:49K  philips
pmbt5550 3.pdf pdf_icon

PMBT5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5550NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5550FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION Low voltage (max. 140 V).1 base2 emitterAPPLICATIONS3 collector

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | 2SC1009A | SGSF321

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