RN1971CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1971CT
Código: JF
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.14 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: CST6
Búsqueda de reemplazo de transistor bipolar RN1971CT
RN1971CT Datasheet (PDF)
rn1970ct rn1971ct.pdf
RN1970CT, RN1971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970CT,RN1971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a trans
rn1970fs rn1971fs.pdf
RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.00.05package 0.80.05 0.10.050.10.05 Incorporating a bias resistor into a tr
rn1970fe-rn1971fe.pdf
RN1970FE,RN1971FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FE,RN1971FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing
rn1970-rn1971.pdf
RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2970~R
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1401 | 2SD1536M | LMUN5212T1G
History: 2SD1401 | 2SD1536M | LMUN5212T1G
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