All Transistors. RN1971CT Datasheet

 

RN1971CT Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN1971CT
   SMD Transistor Code: JF
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.14 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: CST6

 RN1971CT Transistor Equivalent Substitute - Cross-Reference Search

   

RN1971CT Datasheet (PDF)

 ..1. Size:139K  toshiba
rn1970ct rn1971ct.pdf

RN1971CT RN1971CT

RN1970CT, RN1971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970CT,RN1971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a trans

 8.1. Size:116K  toshiba
rn1970fs rn1971fs.pdf

RN1971CT RN1971CT

RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.00.05package 0.80.05 0.10.050.10.05 Incorporating a bias resistor into a tr

 8.2. Size:122K  toshiba
rn1970fe-rn1971fe.pdf

RN1971CT RN1971CT

RN1970FE,RN1971FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FE,RN1971FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 8.3. Size:114K  toshiba
rn1970-rn1971.pdf

RN1971CT RN1971CT

RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2970~R

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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