RN2108CT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2108CT  📄📄 

Código: U7

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT883 CST3

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RN2108CT datasheet

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RN2108CT

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RN2108CT

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RN2107MFV RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.8 0.05 enabling the ma

MOSTRAR MÁS

Otros transistores... RN2106MFV, RN2106, RN2107ACT, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, 2SD669A, RN2108FS, RN2108MFV, RN2108, RN2109ACT, RN2109CT, RN2109FS, RN2109F, RN2109MFV