RN2108CT Datasheet. Specs and Replacement

Type Designator: RN2108CT  📄📄 

SMD Transistor Code: U7

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT883 CST3

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RN2108CT datasheet

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RN2108CT

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RN2108CT

RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip... See More ⇒

 8.3. Size:194K  toshiba

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RN2108CT

RN2107MFV RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.8 0.05 enabling the ma... See More ⇒

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Detailed specifications: RN2106MFV, RN2106, RN2107ACT, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, 2SD669A, RN2108FS, RN2108MFV, RN2108, RN2109ACT, RN2109CT, RN2109FS, RN2109F, RN2109MFV

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