RN2112CT Todos los transistores

 

RN2112CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2112CT
   Código: UH
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT883 CST3

 Búsqueda de reemplazo de transistor bipolar RN2112CT

 

RN2112CT Datasheet (PDF)

 ..1. Size:134K  toshiba
rn2112ct rn2113ct.pdf

RN2112CT RN2112CT

RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112CT,RN2113CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

 8.1. Size:276K  toshiba
rn2112f rn2113f.pdf

RN2112CT RN2112CT

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (

 8.2. Size:94K  toshiba
rn2112fs rn2113fs.pdf

RN2112CT RN2112CT

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe

 8.3. Size:290K  toshiba
rn2112mfv rn2113mfv.pdf

RN2112CT RN2112CT

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.20.05 Ultra-small package, suited to very high density mounting 0.80.05 Incorporating a bias resistor into the transistor reduces the number of

 8.4. Size:124K  toshiba
rn2112ft-rn2113ft.pdf

RN2112CT RN2112CT

RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 8.5. Size:109K  toshiba
rn2112-rn2113.pdf

RN2112CT RN2112CT

RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112, RN1113 Equivalent Circuit Maximum Ratings (Ta = 25C)

 8.6. Size:153K  toshiba
rn2112act rn2113act.pdf

RN2112CT RN2112CT

RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication.

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