RN2112CT Datasheet and Replacement
Type Designator: RN2112CT
SMD Transistor Code: UH
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT883 CST3
RN2112CT Substitution
RN2112CT Datasheet (PDF)
rn2112ct rn2113ct.pdf

RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112CT,RN2113CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab
rn2112f rn2113f.pdf

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (
rn2112fs rn2113fs.pdf

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe
rn2112mfv rn2113mfv.pdf

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.20.05 Ultra-small package, suited to very high density mounting 0.80.05 Incorporating a bias resistor into the transistor reduces the number of
Datasheet: RN2110 , RN2111ACT , RN2111CT , RN2111FS , RN2111F , RN2111MFV , RN2111 , RN2112ACT , 2N2907 , RN2112FS , RN2112MFV , RN2112 , RN2113ACT , RN2113CT , RN2113FS , RN2113F , RN2113MFV .
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