RN2114MFV Todos los transistores

 

RN2114MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2114MFV
   Código: YQ.
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 0.9 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT723 VESM

 Búsqueda de reemplazo de transistor bipolar RN2114MFV

 

RN2114MFV Datasheet (PDF)

 ..1. Size:200K  toshiba
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf

RN2114MFV
RN2114MFV

RN2114MFVRN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mmSwitching Applications Inverter Circuit Applications 1.20.05 0.80.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis

 8.1. Size:175K  toshiba
rn2114ft rn2118ft.pdf

RN2114MFV
RN2114MFV

RN2114FTRN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT

 8.2. Size:179K  toshiba
rn2114f rn2118f.pdf

RN2114MFV
RN2114MFV

RN2114FRN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F~RN1118F Equivalent Circuit and B

 8.3. Size:161K  toshiba
rn2114 rn2118.pdf

RN2114MFV
RN2114MFV

RN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 ~ RN1109 Equivalent Circuit and Bias Resistor V

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