RN2114MFV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2114MFV  📄📄 

Código: YQ.

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT723 VESM

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RN2114MFV datasheet

 ..1. Size:200K  toshiba
 rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf pdf_icon

RN2114MFV

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis

 8.1. Size:175K  toshiba
 rn2114ft rn2118ft.pdf pdf_icon

RN2114MFV

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT

 8.2. Size:179K  toshiba
 rn2114f rn2118f.pdf pdf_icon

RN2114MFV

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B

 8.3. Size:161K  toshiba
 rn2114 rn2118.pdf pdf_icon

RN2114MFV

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resistor V

MOSTRAR MÁS

Otros transistores... RN2112MFV, RN2112, RN2113ACT, RN2113CT, RN2113FS, RN2113F, RN2113MFV, RN2113, 2N2222, RN2114, RN2115F, RN2115MFV, RN2115, RN2116FT, RN2116F, RN2116MFV, RN2116