RN2114MFV Datasheet. Specs and Replacement

Type Designator: RN2114MFV  📄📄 

SMD Transistor Code: YQ.

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT723 VESM

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RN2114MFV datasheet

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RN2114MFV

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis... See More ⇒

 8.1. Size:175K  toshiba

 rn2114ft rn2118ft.pdf pdf_icon

RN2114MFV

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT... See More ⇒

 8.2. Size:179K  toshiba

 rn2114f rn2118f.pdf pdf_icon

RN2114MFV

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B... See More ⇒

 8.3. Size:161K  toshiba

 rn2114 rn2118.pdf pdf_icon

RN2114MFV

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resistor V... See More ⇒

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Detailed specifications: RN2112MFV, RN2112, RN2113ACT, RN2113CT, RN2113FS, RN2113F, RN2113MFV, RN2113, 2N2222, RN2114, RN2115F, RN2115MFV, RN2115, RN2116FT, RN2116F, RN2116MFV, RN2116

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