RN2114MFV Datasheet and Replacement
Type Designator: RN2114MFV
SMD Transistor Code: YQ.
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT723 VESM
- BJT Cross-Reference Search
RN2114MFV Datasheet (PDF)
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf

RN2114MFVRN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mmSwitching Applications Inverter Circuit Applications 1.20.05 0.80.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis
rn2114ft rn2118ft.pdf

RN2114FTRN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT
rn2114f rn2118f.pdf

RN2114FRN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F~RN1118F Equivalent Circuit and B
rn2114 rn2118.pdf

RN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 ~ RN1109 Equivalent Circuit and Bias Resistor V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | 2N2881 | 2N2872 | T11
Keywords - RN2114MFV transistor datasheet
RN2114MFV cross reference
RN2114MFV equivalent finder
RN2114MFV lookup
RN2114MFV substitution
RN2114MFV replacement
History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | 2N2881 | 2N2872 | T11



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281 | m28s transistor | 2n3640