All Transistors. RN2114MFV Datasheet

 

RN2114MFV Datasheet and Replacement


   Type Designator: RN2114MFV
   SMD Transistor Code: YQ.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT723 VESM
 

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RN2114MFV Datasheet (PDF)

 ..1. Size:200K  toshiba
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf pdf_icon

RN2114MFV

RN2114MFVRN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mmSwitching Applications Inverter Circuit Applications 1.20.05 0.80.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis

 8.1. Size:175K  toshiba
rn2114ft rn2118ft.pdf pdf_icon

RN2114MFV

RN2114FTRN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT

 8.2. Size:179K  toshiba
rn2114f rn2118f.pdf pdf_icon

RN2114MFV

RN2114FRN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F~RN1118F Equivalent Circuit and B

 8.3. Size:161K  toshiba
rn2114 rn2118.pdf pdf_icon

RN2114MFV

RN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 ~ RN1109 Equivalent Circuit and Bias Resistor V

Datasheet: RN2112MFV , RN2112 , RN2113ACT , RN2113CT , RN2113FS , RN2113F , RN2113MFV , RN2113 , C1815 , RN2114 , RN2115F , RN2115MFV , RN2115 , RN2116FT , RN2116F , RN2116MFV , RN2116 .

History: FT1607R | NB223YY

Keywords - RN2114MFV transistor datasheet

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